This report work describes a titanium dioxide (TiO2) atomic layer deposition (ALD) on a
commercial-grade iron substrate from tetrakis (dimethylamino) titanium (TDMAT) and de-ionized water as
titanium and oxygen precursors, respectively. This particular substrate was prepared in a short period of time
(approximately 20 min) by a simple procedure, which could represent a new and interesting option to elaborate
thin films through an ALD process. The TiO2 deposition was studied at the support temperature of 225°C. The
number of ALD cycles was varied in the range of 50 cycles to 250 cycles, and the effects of this parameter were
investigated. Samples were characterized by XPS, XRD, RS, SEM and AFM analyses in order to scrutinize their
composition and microstructure. TiO2 films grew as anatase phase, which was gradually developed with a
rising number of ALD cycles. XPS indicated a moderate silicon contamination due to sandpapers used during
the substrate preparation, which was similar for all samples. However, the morphology and topography of these
layers were clearly determined by the iron support surface. Rough TiO2 films were obtained with RMS
roughness of at least 89 nm............
Author Keywords:- TiO2; TDMAT; Atomic layer deposition; Iron support; Wustite; Raman spectroscopy.
e-ISSN: 2319-183X, p-ISSN: 2319-1821 Source Type: Journal
Original Language: English
Document Type: Article
Number of pages: 11
© Copyright 2014, All rights reserved.